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NJW3281G

Manufacturer:

On Semiconductor

Mfr.Part #:

NJW3281G

Datasheet:
Description:

BJTs TO-3P-3 Through Hole NPN 200 W Collector Base Voltage (VCBO):250 V Collector Emitter Voltage (VCEO):250 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height20.1 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Frequency30 MHz
Number of Elements1
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Power Dissipation200 W
Power Dissipation200 W
Max Collector Current15 A
Collector Emitter Breakdown Voltage60 V
Transition Frequency30 MHz
Element ConfigurationSingle
Max Frequency1 MHz
Collector Emitter Voltage (VCEO)250 V
Max Breakdown Voltage250 V
Gain Bandwidth Product30 MHz
Collector Base Voltage (VCBO)250 V
Collector Emitter Saturation Voltage600 mV
Emitter Base Voltage (VEBO)5 V
hFE Min75
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 months ago)
Max Cutoff Collector Current50 µA
Transistor TypeNPN

Stock: 1

Distributors
pcbx
Unit Price$3.75446
Ext.Price$3.75446
QtyUnit PriceExt.Price
1$3.75446$3.75446
10$3.22742$32.27420
25$3.04396$76.09900
50$2.87093$143.54650
100$2.70773$270.77300
300$2.55381$766.14300
500$2.40870$1204.35000